Inverse Scaling Trends for Charge-Trapping-Induced Degradation of FinFETs Performance

摘要

In this paper, we investigate the impact of a single discrete charge trapped at the top oxide interface on the performance of scaled nMOS FinFET transistors. The charge-trapping-induced gate voltage shift is simulated as a function of the device scaling and for several regimes of conduction-from subthreshold to ON-state. Contrary to what is expected for planar MOSFETs, we show that the trap impact decreases with scaling down the FinFET size and the applied gate voltage. By comparing drift-diffusion with nonequilibrium Green functions simulations, we show that quantum effects in the charge distribution and transport can reduce or amplify the impact of discrete traps in simulation of reliability resilience of scaled FinFETs.