Electrical Characteristics of n, p-In_0.53Ga_0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer

摘要

The effects of plasma enhanced atomic layer deposition (PEALD)-AlN interfacial passivation layer (IPL) on the Al₂O₃/In_0.53Ga_0.47As interfaces qualities are studied with different plasma powers. The improvement in electrical properties, including capacitance-voltage (C–V) hysteresis, frequency dispersion, and interface state densities ((D_{mathrm {mathbf {it}}})) are demonstrated on the Al₂O₃, p-In_0.53Ga_0.47As MOS capacitors. The excellent (C-V) behaviors are observed on both type of In_0.53Ga_0.47As-based MOS devices by performing a thin AlN-IPL at the plasma power of 150 W. To explore the interaction between PEALD-AlN layer and In_0.53Ga_0.47As surface, X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy analyses have also been characterized.