Increased Multilayer Fabrication and RF Characterization of a High-Density Stacked MIM Capacitor Based on Selective Etching

摘要

This paper presents the fabrication and characterization of a high-density multilayer stacked metal–insulator–metal (MIM) capacitor based on a novel process of depositing the MIM multilayer on pillars followed by polishing and selective etching steps to form a stacked capacitor with merely three photolithography steps. In this paper, the pillars were made of glass to prevent substrate loss, whereas an oxide–nitride–oxide dielectric was employed for lower leakage, better voltage/frequency linearity, and better stress compensation. MIM capacitors with six dielectric layers were successfully fabricated, yielding capacitance density of 3.8 fF/ (mu ) m (^{2}) , maximum capacitance of 2.47 nF, and linear and quadratic voltage coefficients of capacitance below 21.2 ppm/V and 2.31 ppm/V (^{2}) . The impedance was measured from 40 Hz to 3 GHz, and characterized by an analytically derived equivalent circuit model to verify the radio frequency applicability. The multilayer stacking-induced plate resistance mismatch and its effect on the equivalent series resistance (ESR) and effective capacitance was also investigated, which can be counteracted by a corrected metal thickness design. A low ESR of 800 m (Omega ) was achieved, whereas the self-resonance frequency was (>760) MHz, successfully demonstrating the feasibility of this method to scale up capacitance densities for high-quality-factor, high-frequency, and large-value MIM capacitors.