Ga-Doped ZnO Nanosheet Structure-Based Ultraviolet Photodetector by Low-Temperature Aqueous Solution Method

摘要

The fabrication of Ga-doped zinc oxide (GZO) nanosheets on a glass substrate was done using the aqueous solution method. A GZO nanosheet metal–semiconductor–metal ultraviolet (UV) photodetector (PD) was also fabricated. The average length and diameter of the GZO nanosheets were 1.28 and nm, respectively. The energy dispersive X-ray spectrum determined that the Ga-doped sample contains % at.%. The UV-to-visible rejection ratio of the sample is when biased at 1 V, and the fabricated UV PD is visible-blind with a sharp cutoff at 370 nm. The photocurrent and dark-current constant ratio of the fabricated PD was 193 when biased at 1 V. The transient time constants measured during the rise time and the fall time were 2.45 and 4 s, respectively.