Modeling of Wide Bandgap Power Semiconductor Devices—Part I

摘要

Wide bandgap power devices have emerged as an often superior alternative power switch technology for many power electronic applications. These devices theoretically have excellent material properties enabling power device operation at higher switching frequencies and higher temperatures compared with conventional silicon devices. However, material defects can dominate device behavior, particularly over time, and this should be strongly considered when trying to model actual characteristics of currently available devices. Compact models of wide bandgap power devices are necessary to analyze and evaluate their impact on circuit and system performance. Available compact models, i.e., models compatible with circuit-level simulators, are reviewed. In particular, this paper presents a review of compact models for silicon carbide power diodes and MOSFETs.