Analytical Drain Current Model for Organic Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States

摘要

Surface-potential-based drain current model is presented for organic thin-film transistors considering both exponential deep and tail trap states densities. The model is derived on the basis of the assumption that the trapped carrier concentration dominates Poisson's equation. An analytical drain current expression is obtained. The expression is valid in both subthreshold and above-threshold regimes. The calculated results are verified by available experimental data at different temperatures.