Very Low-Work-Function ALD-Erbium Carbide (ErC₂) Metal Electrode on High- Dielectrics

摘要

Erbium carbide (ErC2) prepared by atomic layer deposition (ALD) is successfully demonstrated for the first time as a novel work function (WF) metal for nMOSFET applications. The prepared ErC2 shows a very low effective WF (eWF), as low as 3.9 eV on HfO2, yet with excellent thermal stability. In addition, it did not show significant Fermi-level pinning on high- dielectrics even after high-temperature annealing. The low eWF property of ErC2 originates from the properties of the lanthanide family, while its good thermal stability is attributed to the properties of metal carbides. ALD-ErC2 has superior conformality over other deposition methods, and thus is a strong candidate for 3-D structure devices.