Parasitic Capacitance Analytical Model for Sub-7-nm Multigate Devices

摘要

In this paper, we propose an analytical model to accurately evaluate the parasitic capacitances of an advanced 7-nm-node multigate device structure: 1) FinFET on Silicon On Insulator (SOI) (FFSOI) and 2) stacked nanowire on SOI (SNWSOI). Our model, validated through 3-D TCAD simulations, accounts for gate contact, advanced process bricks, such as gate last, BAR contact, and low- spacer, but also multilayer dielectric by introducing an equivalent permittivity. Finally, FFSOI and SNWSOI architectures are compared from this parasitic capacitance point of view.