Device Simulations for Ultrahigh-Speed and High-Voltage Image Sensors

摘要

Physical models and algorithms for use in device simulations of ultrahigh-speed and high-voltage image sensors are reported. In the analyses of ultrahigh-speed image sensors, propagation of the electromagnetic field induced by electrodes cannot be ignored. To obtain consistent basic equations for both the device and electromagnetic field propagation simulations, we introduce a Nakanishi–Lautrup field from quantum electrodynamics into the electromagnetic field model. To perform current analyses for high-voltage image sensors with applied voltages of >35 V, we adopt quad precision numbers for all parameters. The models and algorithms are reported, and some computational results are presented.