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机译:基于反向偏置P + -I-N +结构的散装光电导半半导体开关性能研究
Key Laboratory for Physical Electronics and Devices of the Ministry of Education Xi’an Jiaotong University Xi’an China;
Xi’an University of Technology Xi’an China;
School of Electronic and Information Engineering Xi’an Jiaotong University Xi’an China;
Key Laboratory for Physical Electronics and Devices of the Ministry of Education Xi’an Jiaotong University Xi’an China;
Xi’an University of Technology Xi’an China;
Xi’an University of Technology Xi’an China;
Institute of Ion Beam Physics and Material Research Helmholtz-Zentrum Dresden-Rossendorf Dresden Germany;
Optical switches; Gallium arsenide; Semiconductor lasers; Measurement by laser beam; Photonics; Laser modes;
机译:基于散装喷射和开关偏置技术的Cascode混合器设计为180nm CMOS工艺的高性能接收机前端
机译:基于ZnO纳米带薄膜的光电导半导体开关的紫外光电性能增强
机译:基于快光开关的基于光学高性能计算基础设施的性能研究
机译:光导开关GaAs半导体开关的研究
机译:用时间分辨太赫兹光谱法测量了块状和纳米晶体半导体的光电导性。
机译:半导体:基于并五苯/ P13 /并五苯作为电荷传输层和陷阱层的有机半导体异质结构的高性能非易失性有机场效应晶体管存储器(Adv。Sci。8/2017)
机译:高压反向偏置p + -n-n +结构的皮秒切换 通过脉冲照明进入导电状态
机译:光电导闭合开口Gaas半导体开关的研究。