An Inkjet-Printed Full-Wave Rectifier for Low-Voltage Operation Using Electrolyte-Gated Indium-Oxide Thin-Film Transistors

摘要

Rectifiers are vital electronic circuits for signal and power conversion in various smart sensor applications. The ability to process low input voltage levels, for example, from vibrational energy harvesters is a major challenge with existing passive rectifiers in printed electronics, stemming mainly from the built-in potential of the diode’s p-n-junction. To address this problem, in this work, we design, fabricate, and characterize an inkjet-printed full-wave rectifier using diode-connected electrolyte-gated thin-film transistors (EGTs). Using both experimental and simulation approaches, we investigate how the rectifier can benefit from the near-zero threshold voltage of transistors, which can be enabled by proper channel geometry setting in EGT technology. The presented circuit can be operated at 1-V input voltage, featuring a remarkably small voltage loss of 140mV and a cutoff frequency of ~300 Hz. Below the cutoff frequency, more than 2.6- $oldsymbol mu ext{W}$ dc power is obtained over the load resistances ranging from 5 to 20 $ext{k}oldsymbol Omega $ . Furthermore, experiments show that the circuit can work with an input amplitude down to 500mV. This feature makes the presented design highly suitable for a variety of energy-harvesting applications.