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机译:伪栅极移除的影响和硅帽对NFINFET的低频噪声性能
School of Electronic Engineering Xi’an University of Posts & Telecommunications Xi’an China;
imec Leuven Belgium;
School of Electronic Engineering Xi’an University of Posts & Telecommunications Xi’an China;
imec Leuven Belgium;
imec Leuven Belgium;
Logic gates; Silicon; Reliability; MOSFET; Low-frequency noise; Voltage measurement; Performance evaluation;
机译:沟道宽度和虚拟长度对带有硅锗合金应力源的p型金属氧化物半导体场效应晶体管性能增强的影响
机译:低频噪声表征绝缘子上锗(GeOI)高k和金属栅极pMOSFET的工艺选项的影响
机译:有效功函数栅金属对绝缘体上全栅NWFET的低频噪声的影响
机译:器件架构和栅叠工艺对硅纳米线晶体管低频噪声的影响
机译:硅锗HBT低频噪声和振荡器相位噪声的建模和缩放限制
机译:面向低电压低能耗的超薄绝缘体上硅MOSFET低频噪声行为的经验和理论模型
机译:栅漏间距对原位SiN钝化InAlGaN / GaN MIS-HEMT的低频噪声性能的影响
机译:硅锗Rtg对燃料胶囊温度和热通量的性能和重量依赖性