High-Performance Solution-Processed Pentacene/Al Schottky Ultraviolet Photodiode With Pseudo Photovoltaic Effect

摘要

This article reports a solution-processed pentacene/Al Schottky photodiode for ultraviolet (UV) detection. A low-cost dispersion method is used to fabricate the pentacene film on ITO substrates. The surface morphology, crystalline properties, electrical, and optical properties of the pentacene film have been investigated in detail by X-ray diffraction (XRD), AFM, SEM, UV-visible (Vis), and Hall measurements. Also, the UV detection characteristics were studied. The mechanism attributes to a pseudo photovoltage developedat the Schottky junction. The device shows a high sensitivity of 5.7 (372 nm), a detectivity of 1.25 x 10(12) Jones (364 nm), and a quantum efficiency of 1502% (362 nm) at 1-V applied bias. This work paves the way for developing future-generation high-performance organic photodetectors suitable for optoelectronic applications.