Effects of Charge Quantity Induced by Different Forming Methods in Solid Electrolyte GeSO-Based Resistance Switching Device With Copper Electrode

摘要

In this article, two different resistance switching (RS) behaviors are demonstrated after using dc and constant bias stressed (CBS) forming methods in GeSO-based resistive random access memory (RRAM) with a copper top electrode. Electrical measurements show that the amount of charge during the forming process significantly affects their RS behaviors. Large memory windows appear when applying CBS forming, while traditional dc forming did not exhibit such characteristics. Both current-voltage (I-V) fitting and high temperature retention test are used to further investigate the RS property and verify the stability. Finally, conduction models for devices using these different forming methods are also proposed to better illustrate their different conducting behaviors in the GeSO-based RRAM device.