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Lightweight Integrated Design of PUF and TRNG Security Primitives Based on eFlash Memory in 55-nm CMOS

机译:基于EFLASH内存的PUF和TRNG安全原语的轻量级集成设计在55-NM CMOS中

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We present a lightweight, suitable for Internet of Things (IoT) devices, integrated design of physically unclonable function (PUF) and true random number generator (TRNG) based on embedded flash memory in 55-nm CMOS. In the proposed approach, the randomness in nonlinear characteristics and temporal current fluctuations of embedded flash memories are exploited to generate the dynamic and static entropies. Shared silicon in designing PUF and TRNG results in a very compact and energy-efficient topology. Experimental and simulation results demonstrate >10(200) key space, 0.58-pJ/b energy efficiency for < 5% controllable bit error rate at 80 degrees C, up to 192.3-Mbps throughput, high Shannon entropy, and resiliency toward machine learning attacks. Accelerated aging measurements indicate stable physical unclonable function response after 900 min of baking at 85 degrees C.
机译:我们提出了一种轻量级,适用于物联网(IOT)设备,基于55-nm CMOS中的嵌入式闪存的物理上不可分类功能(PUF)和真正随机数发生器(TRNG)的集成设计。在所提出的方法中,利用嵌入式闪存的非线性特性和时间电流波动的随机性来利用动态和静态熵。在设计PUF和TRNG时共享硅导致非常紧凑且节能的拓扑。实验和仿真结果示出了> 10(200)个关键空间,0.58-PJ / B能量效率为80°C的5%,高达192.3Mbps吞吐量,高香农熵,以及对机器学习攻击的弹性。加速老化测量表明在85℃的烘烤900分钟后稳定的物理不可渗透功能响应。

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