A Simulation-Based Comparison Between Si and SiC MOSFETs on Single-Event Burnout Susceptibility

Xintian Zhou; Yunpeng Jia; Dongqing Hu; Yu Wu

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A Simulation-Based Comparison Between Si and SiC MOSFETs on Single-Event Burnout Susceptibility

机译：Si和SiC MOSFET在单事件熔断敏感性方面的基于仿真的比较

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This paper presents the simulation-based comparison between silicon (Si) and silicon carbide (SiC) MOSFETs on the single-event burnout (SEB) performance for the first time. The safe operation areas (SOAs) regarding SEB are extracted and compared between t

机译：本文首次提出了基于仿真的硅（Si）和碳化硅（SiC）MOSFET在单事件烧断（SEB）性能上的比较。提取与SEB有关的安全操作区域（SOA）并在t之间进行比较

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来源
《IEEE Transactions on Electron Devices》 |2019年第6期|2551-2556|共6页
作者
Xintian Zhou; Yunpeng Jia; Dongqing Hu; Yu Wu;
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作者单位

Laboratory of Power Semiconductor Devices and ICs Beijing University of Technology Beijing China;

Laboratory of Power Semiconductor Devices and ICs Beij;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
MOSFET; Silicon carbide; Silicon; Ions; Semiconductor process modeling; Electric breakdown; Performance evaluation;

机译：MOSFET;碳化硅;硅;离子;半导体工艺建模;电击穿;绩效评估;

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专利

1. Analysis of neutron-induced single-event burnout in SiC power MOSFETs [J] . Shoji Tomoyuki, Nishida Shuichi, Hamada Kimimori, Microelectronics & Reliability . 2015,第9a10期

机译：SiC功率MOSFET中子引起的单事件烧毁的分析
2. Single-Event Burnout Hardness for the 4H-SiC Trench-Gate MOSFETs Based on the Multi-Island Buffer Layer [J] . Wang Ying, Lin Mao, Li Xing-Ji, IEEE Transactions on Electron Devices . 2019,第10期

机译：基于多岛缓冲层的4H-SiC沟道栅MOSFET的单事件烧断硬度
3. Tolerance Against Terrestrial Neutron-Induced Single-Event Burnout in SiC MOSFETs [J] . Asai H., Nashiyama I., Sugimoto K., Nuclear Science, IEEE Transactions on . 2014,第6期

机译：SiC MOSFET对地面中子引起的单事件烧毁的容忍度
4. Study on single-event burnout of SiC VDMOSFET: failure mechanism and influence factors [C] . Qiumei Li, Xianping Chen, Houcai Luo, International Conference on Electronic Packaging Technology . 2019

机译：SiC VDMOSFET单事件烧毁的研究：失效机理及影响因素
5. Electrical passivation of 6H-alpha SiC by thermal oxidation and its characterization and application in SiC MOSFETs. [D] . Kang, Soon Won. 1996

机译：6H-αSiC的热氧化电钝化及其表征和在SiC MOSFET中的应用。
6. Radiation Response of Negative Gate Biased SiC MOSFETs [O] . Akinori Takeyama, Takahiro Makino, Shuichi Okubo, 2019

机译：负栅偏置SiC MOSFET的辐射响应
7. Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes [O] . D. R. Ball, J. M. Hutson, A. Javanainen, 2020

机译：高压SiC电源MOSFET中单事件烧坏的离子诱导能量脉冲机制及结屏障肖特基二极管
8. Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs. [R] . Lauenstein, J. M., Goldsman, N., Liu, S., 2012

机译：离子原子序数对功率mOsFET单事件栅极断裂（sEGR）敏感性的影响。

A Simulation-Based Comparison Between Si and SiC MOSFETs on Single-Event Burnout Susceptibility

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