Analysis of neutron-induced single-event burnout in SiC power MOSFETs

摘要

The triggering mechanism of single-event burnout (SEB) in SiC power MOSFETs was studied by white neutron irradiation experiments and device simulations. Electron-hole pairs generated along a recoil ion trajectory resulted in a highly localized SEB current. This dynamic current led to an increase in the electron density in the vicinity of the n(-)/n(+) interface, which resulted in a shift in the peak electric field strength. Finally, a local short-circuit occurred between the drain and source electrodes by punch-through of the electric field in the n(+) source diffusion region.