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机译:栅介质和高
Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China;
Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China;
Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China;
Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China;
Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China;
Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Peoples R China;
Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Peoples R China;
Charged impurity (CI) scattering; high-k encapsulation; mobility; MoS2 FET; trapped charges;
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机译:具有 inline-formula>
机译:基于
机译:接口陷阱和氧化阱对超薄(EOT〜1nm)高κ堆叠栅极电介质MOS器件栅极电容的影响
机译:存在高κ栅极绝缘体的块状Si NMOSFET中的电子传输:电荷俘获和迁移率
机译:高κ氧化物纳米带作为高迁移率顶栅石墨烯晶体管的栅极电介质
机译:Ta2O5作为替代高中的调查 -