Investigation of Ta2O5 as an Alternative High- ${k}$ Dielectric for InAlN/GaN MOS-HEMT on Si

机译：Ta2O5作为替代高中的调查 - $ {k} $ Si上的Inaln / GaN MOS-HEMT的电介质

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Sandeep Kumar; Himanshu Kumar; Sandeep Vura; Anamika Singh Pratiyush; Vanjari Sai Charan; Surani B. Dolmanan; Sudhiranjan Tripathy; Rangarajan Muralidharan; Digbijoy N. Nath;
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1. Investigation of Ta₂O₅ as an Alternative High- ${k}$ Dielectric for InAlN/GaN MOS-HEMT on Si [J] . Kumar Sandeep, Kumar Himanshu, Vura Sandeep, IEEE Transactions on Electron Devices . 2019,第3期

机译：Ta _{2 O _{5 作为替代的高 $ {k} $ 用于Si上InAlN / GaN MOS-HEMT的电介质}}
2. A New Physical Method Based on $CV$ – $GV$ Simulations for the Characterization of the Interfacial and Bulk Defect Density in High- $k$ /III-V MOSFETs [J] . Sereni Gabriele, Vandelli Luca, Veksler Dmitry, Electron Devices, IEEE Transactions on . 2015,第3期

机译：基于 $ CV $ – $ GV $ 模拟高- $ k $ < / tex-math> / III-V MOSFET
3. High-Performance Solution-Processed Low-Voltage Polymer Thin-Film Transistors With Low- $k$ /High- $k$ Bilayer Gate Dielectric [J] . Tang Wei, Li Jinhua, Zhao Jiaqing, Electron Device Letters, IEEE . 2015,第9期

机译：具有低 inline-formula> $ k $ / High-的高性能溶液处理的低压聚合物薄膜晶体管 $ k $ 双层栅极电介质
4. Enhancement-mode Al2O3/InAlN/GaN MOS-HEMT on Si with high drain current density 0.84 A/mm and threshold voltage of #x002B;1.9 V [C] . Freedsman Joseph.J., Watanabe Arata, Egawa Takashi Annual Device Research Conference . 2014

机译：Si上的增强模式Al 2 O 3 / InAlN / GaN MOS-HEMT，具有高漏极电流密度0.84 A / mm和阈值电压+1.9 V
5. Investigation of ALD Dielectrics for Improved Threshold Voltage Stability and Current Collapse Suppression in AlGaN/GaN MOS-HFETs. [D] . Ramanan, Narayanan. 2014

机译：为改善AlGaN / GaN MOS-HFET中的阈值电压稳定性和电流崩塌抑制而研究ALD介电材料的研究。
6. Raman Spectra of High-κ Dielectric Layers Investigated with Micro-Raman Spectroscopy Comparison with Silicon Dioxide [O] . P. Borowicz, A. Taube, W. Rzodkiewicz, 2013

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7. A Compact Resistor-Based CMOS Temperature Sensor With an Inaccuracy of 0.12 °C (3 $sigma$ ) and a Resolution FoM of 0.43 pJ $cdot$ K $^{2}$ in 65-nm CMOS [O] . Woojun Choi, Yongtae Lee, Seonhong Kim, 2018

机译：基于紧凑的电阻式CMOS温度传感器，其不准确为0.12°C（3 $ Sigma $ ）和0.43 pj $ cdot $ k $ ^ {2} $ 65-nm cmos
8. Investigation of Jet Vapor Deposited (JVD) Silicon Oxide/Nitride/Oxide (ONO) Films as Gate Dielectrics for SiC and GaN Devices. [R] . Cooper, J. A. 2003

机译：喷射气相沉积（JVD）氧化硅/氮化物/氧化物薄膜（ONO）薄膜作为siC和GaN器件的栅极电介质的研究。

Investigation of Ta2O5 as an Alternative High- ${k}$ Dielectric for InAlN/GaN MOS-HEMT on Si

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