A high-current-gain low-temperature pseudo-HBT utilizing a sidewall base-contact structure (SICOS)

摘要

A silicon pseudo-heterojunction bipolar transistor (HBT) with a current gain of over 100 at 77 K has been successfully fabricated using the upward operation of a self-aligned sidewall base-contact structure (SICOS). The measured characteristics agree well with the theoretical prediction, showing a negative exponential temperature dependence of current gain and a 2500-times larger collector current than in the conventional transistor at 77 K. This makes homojunction bipolar transistor operation at low temperatures feasible and has the potential to overcome the bipolar/BiCMOS limitations.