...
首页> 外文期刊>IEEE Electron Device Letters >Metal electromigration damage healing under bidirectional current stress
【24h】

Metal electromigration damage healing under bidirectional current stress

机译:双向电流应力下的金属电迁移损伤修复

获取原文
获取原文并翻译 | 示例
           

摘要

The AC electromigration lifetime, without DC component, has been studied in a wide frequency range (mHz to 200 MHz) and found to be linearly proportional to the repetition frequency of the AC stressing current. This behavior is observed in both of the metallization systems (Al-2% Si and Cu) investigated. This provides further confirmation that AC lifetime is orders of magnitude longer than DC lifetime and that CMOS signal lines may be called upon to carry much larger current than allowed in present practice.
机译:已经在很宽的频率范围(mHz至200 MHz)中研究了无DC分量的AC电迁移寿命,并且发现其与AC应力电流的重复频率成线性比例。在研究的两种金属化系统(Al-2%Si和Cu)中均观察到了这种行为。这进一步证实了交流电的寿命比直流电的寿命长几个数量级,并且可以要求CMOS信号线承载比目前实际允许的电流大得多的电流。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号