Kink effect in an InAs inserted-channel InAlAs/InGaAs inverted HEMT at low temperature

摘要

The authors have investigated the kink effect In an InAs-inserted-channel InAlAs/InGaAs inverted HEMT at low temperature. The kink effect was not observed at both 77 and 300 K, but it appeared at 4.2 K. It is shown that the kink effect is caused at low drain voltages by the suppression of the drain current due to an increase in the source access resistance and at higher drain voltages by the increase in the drain current due to holes generated by impact ionization.