A single-poly EEPROM cell in SIMOX technology for high-temperature applications up to 250/spl deg/C

摘要

A thin-film SIMOX technology has been used for fabrication of a single-polysilicon EEPROM cell suitable for high-temperature applications. The two transistor cell is composed of a select transistor and a floating gate transistor with 10 nm tunnel oxide. The EEPROM process extension requires only a few steps suitable for embedded memory applications with low cost and turn around time. Endurance and data retention characteristics of the SIMOX EEPROM cell are presented for a temperature of 250/spl deg/C. The problem of temperature induced leakage currents in the select transistor at elevated temperatures is investigated.