Exploration of velocity overshoot in a high-performance deep sub-0.1-/spl mu/m SOI MOSFET with asymmetric channel profile

摘要

The electron velocity overshoot phenomenon in the inversion layer is experimentally investigated using a novel thin-film silicon-on-insulator (SOI) test structure with channel lengths down to 0.08 /spl mu/m. The uniformity of the carrier density and tangential field is realized by employing a lateral asymmetric channel (LAC) profile. The electron drift velocity observed in this work is 9.5/spl times/10/sup 6/ cm/s for a device with L/sub eff/=0.08 /spl mu/m at 300 K. The upward trend in electron velocity can be clearly noticed for decreasing channel lengths.