Design and characterization of high-voltage self-clamped IGBT's

摘要

A new concept of field limiting ring (FLR) with variable ring widths is proposed for designing a high-voltage collector-gate clamped IGBT. An insulated gate bipolar transistor (IGBT) based on the concept has been designed and fabricated with a conventional IGBT process flow to provide a clamp voltage of 620 V. The dc and unclamped inductive switching (UIS) energy parameters of the IGBT are fully characterized for a temperature range of -40-150/spl deg/C. The new high-voltage self-clamped IGBT is to be primarily used in automotive ignition applications.