Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks

摘要

In this work, we demonstrate that the magnitude of flatband voltage (V/sub FB/) shift for ultrathin (>2 nm) silicon dioxide-silicon nitride (ON) gate stacks in MOSFET's depends on the Fermi level position in the gate material. In addition, a fixed positive charge at the oxide-nitride interface was observed.