4 kV 4H-SiC Epitaxial Emitter Bipolar Junction Transistors

摘要

In this paper, we present 4H-SiC bipolar junction transistors (BJTs) with open-base blocking voltage (BV{sub}(CEO)) of 4000 V, specific on-resistance (R{sub}(on, sp)) of 56 mΩ-cm{sup}2, and common-emitter current gain β ～ 9. These devices are designed with interdigitated base and emitter fingers with multiple emitter stripes. We assess the impact of design (emitter stripe width and contact spacing) on device performance and also examine the effect of emitter contact resistance on the device forward conduction characteristics.