A 4.15 kV 9.07-mΩ·cm{sup}2 4H-SiC Schottky-Barrier Diode Using Mo Contact Annealed at High Temperature

摘要

In this letter, we report the fabrication of high-voltage and low-loss 4H-SiC Schottky-barrier diodes (SBDs) with a performance close to the theoretical limit using a Mo contact annealed at high-temperature. High-temperature annealing for the Mo contact was found to be effective in controlling the Schottky-barrier height at 1.2-1.3 eV without degradation of n-factor and reverse characteristics. We successfully obtained a 1-mm{sup}2 Mo-4H-SiC SBD with a breakdown voltage (Vb) of 4.15 kV and a specific on resistance (Ron) of 9.07 mΩ·cm{sup}2, achieving a best (V{sub}b){sup}2/R{sub}(on) value of 1898 MW/cm{sup}2. We also obtained a 9-mm{sup}2 Mo-4H-SiC SBD with V{sub}b of 4.40 kV and R{sub}(on) of 12.20 mΩ·cm{sup}2.