Cointegration of In Situ Doped Silicon–Carbon Source and Silicon–Carbon I-Region in P-Channel Silicon Nanowire Impact-Ionization Transistor

Toh E.-H.; Wang G. H.; Chan L.; Weeks D.; Bauer M.; Spear J.; Thomas S. G.; Samudra G.; Yeo Y.-C.

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Cointegration of In Situ Doped Silicon–Carbon Source and Silicon–Carbon I-Region in P-Channel Silicon Nanowire Impact-Ionization Transistor

机译：P沟道硅纳米线冲击电离晶体管中原位掺杂的硅碳源和硅碳I区的共集成

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The p-channel impact-ionization nanowire multiple-gate field-effect transistors (I-MuGFETs or I-FinFETs), which have a multiple-gateanowire-channel architecture, were demonstrated. The superior gate-to-channel coupling reduces the breakdown voltage

机译：演示了具有多栅极/纳米线通道架构的p沟道冲击电离纳米线多栅极场效应晶体管（I-MuGFET或I-FinFET）。出色的栅极至通道耦合降低了击穿电压

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来源
《IEEE Electron Device Letters》 |2008年第7期|p.731-733|共3页
作者
Toh E.-H.; Wang G. H.; Chan L.; Weeks D.; Bauer M.; Spear J.; Thomas S. G.; Samudra G.; Yeo Y.-C.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
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正文语种 eng
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1. Cointegration of In Situ Doped Silicon;Carbon Source and Silicon;Carbon I-Region in P-Channel Silicon Nanowire Impact-Ionization Transistor [J] . Eng-Huat Toh, Wang G.H., Lap Chan, IEEE Electron Device Letters . 2008,第7期

机译：P沟道硅纳米线冲击电离晶体管中原位掺杂硅；碳源和硅；碳I区的共集成
2. Silicon–Carbon Stressors With High Substitutional Carbon Concentration and In Situ Doping Formed in Source/Drain Extensions of n-Channel Transistors [J] . Wong H.-S., Ang K.-W., Chan L., IEEE Electron Device Letters . 2008,第5期

机译：在n沟道晶体管的源/漏扩展中形成了具有高替代碳浓度和原位掺杂的硅碳应力源
3. Performance Benefits of Diamond-like Carbon Liner Stressor in Strained P-Channel Field-Effect Transistors With Silicon–Germanium Source and Drain [J] . Tan K.-M., Yang M., Fang W.-W., Electron Device Letters, IEEE . 2009,第3期

机译：类金刚石碳衬里应力源在带硅锗源和漏极的应变P沟道场效应晶体管中的性能优势
4. P-Channel I-MOS Transistor featuring Silicon Nano-Wire with Multiple-Gates, Strained Si{sub}(1-y)C{sub}y, I-region, in situ doped Si{sub}(1-y)C{sub}y Source, and Sub-5mV/decade Subthreshold Swing [C] . Eng-Huat Toh, Grace Huiqi Wang, Doran Weeks, International Symposium on VLSI Technology, Systems and Applications . 2008

机译：P沟道I-MOS晶体管，具有多门，应变Si {sub}（1-y）c {sub} y，i-region，原位掺杂si {sub}（1-y）c {sub} y源，和子5mv /十年亚阈值摆幅
5. Band engineering in silicon/silicon(1-y)carbon(y) and silicon/silicon(1-x-y)germanium(x)carbon(y) heterostructures and application to PNP heterojunction bipolar transistors (Silicon carbide, Silicon germanium carbide). [D] . Singh, Dinkar V. 2001

机译：硅/硅（1-y）碳（y）和硅/硅（1-x-y）锗（x）碳（y）异质结构的能带工程及其在PNP异质结双极晶体管（碳化硅，碳化硅锗）中的应用。
6. Silicon nanowire and carbon nanotube hybrid for room temperature multiwavelength light source [O] . Maria Josè Lo Faro, Cristiano D’Andrea, Elena Messina, -1

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7. In-situ doped junctionless polysilicon nanowires field effect transistors for low-cost biosensors [O] . Zulfiqar Azeem, Patou François, Pfreundt Andrea, 2017

机译：用于低成本生物传感器的原位掺杂无结多晶硅纳米线场效应晶体管

Cointegration of In Situ Doped Silicon–Carbon Source and Silicon–Carbon I-Region in P-Channel Silicon Nanowire Impact-Ionization Transistor

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