Novel Silicon驴Carbon (Si:C) Schottky Barrier Enhancement Layer for Dark-Current Suppression in Ge-on-SOI MSM Photodetectors

Ang K.-W.; Zhu S.-Y.; Wang J.; Chua K.-T.; Yu M.-B.; Lo G.-Q.; Kwong D.-L.

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Novel Silicon驴Carbon (Si:C) Schottky Barrier Enhancement Layer for Dark-Current Suppression in Ge-on-SOI MSM Photodetectors

机译：用于Ge-on-SOI MSM光电探测器中的暗电流抑制的新型Silicon驴碳（Si：C）肖特基势垒增强层

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This letter reports the first demonstration of an evanescent coupled germanium-on-silicon-on-insulator (Ge-on-SOI) metalsemiconductormetal (MSM) photodetector with a novel siliconcarbon (Si:C) Schottky barrier enhancement layer. Through the insertio

机译：这封信报道了具有新型硅碳（Si：C）肖特基势垒增强层的an逝耦合绝缘体上锗化硅（Ge-on-SOI）金属半导体金属（MSM）光电探测器的首次演示。通过插入

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来源
《IEEE Electron Device Letters》 |2008年第7期|p.704-707|共4页
作者
Ang K.-W.; Zhu S.-Y.; Wang J.; Chua K.-T.; Yu M.-B.; Lo G.-Q.; Kwong D.-L.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类一般性问题;
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专利

1. High-Performance Waveguided Ge-on-SOI Metal–Semiconductor–Metal Photodetectors With Novel Silicon–Carbon (Si : C) Schottky Barrier Enhancement Layer [J] . Ang K.-W., Zhu S., Yu M., IEEE Photonics Technology Letters . 2008,第9期

机译：具有新型硅碳（Si：C）肖特基势垒增强层的高性能波导Ge-on-SOI金属-半导体-金属光电探测器
2. Dark-Current Suppression in Metal–Germanium–Metal Photodetectors Through Dopant-Segregation in NiGe—Schottky Barrier [J] . Zang H., Lee S. J., Loh W. Y., IEEE Electron Device Letters . 2008,第2期

机译：通过NiGe-肖特基势垒中的杂质隔离，金属-锗-金属光电探测器中的暗电流抑制
3. High-sensitivity planar Si-based MSM photodetector with very thin amorphous silicon-alloy quantum-well-like barrier layers [J] . Cha-Shin Lin, Li-Ping Tu, Rong-Hwei Yeh, IEEE Photonics Technology Letters . 2003,第7期

机译：具有非常薄的非晶硅合金量子阱状势垒层的高灵敏度平面Si基MSM光电探测器
4. Photocurrent Enhancement Between Two Coplanar Schottky-Barriers on Silicon MSM Photodetector [C] . Narin Atiwongsangthong, Surasak Niemcharoen International Conference on Applied Materials and Electronics Engineering . 2013

机译：硅MSM光电探测器两种共面肖特基屏障之间的光电流增强
5. The fabrication, microstructural characterization, and internal photoresponse of platinum silicide/p-type silicon and iridium silicide/p-type silicon Schottky barrier photodetectors for infrared focal plane arrays [D] . Mercer, Douglas Edward 1990

机译：红外焦平面阵列用硅化铂/ p型硅和硅化铱/ p型硅肖特基势垒光电探测器的制造，微观结构表征和内部光响应
6. Broadband photodetector based on carbon nanotube thin film/single layer graphene Schottky junction [O] . Teng-Fei Zhang, Zhi-Peng Li, Jiu-Zhen Wang, -1

机译：基于碳纳米管薄膜/单层石墨烯肖特基结的宽带光电探测器
7. Light‐Driven Micromotors: Light‐Driven Sandwich ZnO/TiO 2 /Pt Janus Micromotors: Schottky Barrier Suppression by Addition of TiO 2 Atomic Interface Layers into ZnO/Pt Micromachines Leading to Enhanced Fuel‐Free Propulsion (Small Methods 11/2019) [O] . Amir Masoud Pourrahimi, Katherine Villa, Zdeněk Sofer, 2019

机译：光电型微电偶：轻型夹层ZnO / TiO 2 / Pt Janus Micromotors：Schottky屏障抑制通过将TiO 2原子界面层添加到ZnO / Pt微鼠中，导致增强无燃料推进（小方法11/2019）
8. Fabrication, Microstructural Characterization, and Internal Photoresponse ofPlatinum Silicide/P-Type Silicon and Iridium Silicide/P-Type Silicon Schottky Barrier Photodetectors for Infrared Focal Plane Arrays [R] . Mercer, D. E. 1991

机译：用于红外焦平面阵列的铂硅化物/ p型硅和铱硅化物/ p型硅肖特基势垒光电探测器的制造，微观结构表征和内部光响应

Novel Silicon驴Carbon (Si:C) Schottky Barrier Enhancement Layer for Dark-Current Suppression in Ge-on-SOI MSM Photodetectors

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