Low Turn-On Voltage and High-Current $hbox{InP}/ hbox{In}_{0.37}hbox{Ga}_{0.63}hbox{As}_{0.89}hbox{Sb}_{0.11}/hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$  Double Heterojunction Bipolar Transis

Chen S.-H.; Teng K.-H.; Chen H.-Y.; Wang S.-Y.; Chyi J.-I.

首页> 外文期刊>IEEE Electron Device Letters >Low Turn-On Voltage and High-Current $hbox{InP}/ hbox{In}_{0.37}hbox{Ga}_{0.63}hbox{As}_{0.89}hbox{Sb}_{0.11}/hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ Double Heterojunction Bipolar Transis

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Low Turn-On Voltage and High-Current $hbox{InP}/ hbox{In}_{0.37}hbox{Ga}_{0.63}hbox{As}_{0.89}hbox{Sb}_{0.11}/hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ Double Heterojunction Bipolar Transis

机译：低导通电压和大电流$ hbox {InP} / hbox {In} _ {0.37} hbox {Ga} _ {0.63} hbox {As} _ {0.89} hbox {Sb} _ {0.11} / hbox { In} _ {0.53} hbox {Ga} _ {0.47} hbox {As} $双异质结双极晶体管

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We report on the dc and microwave characteristics of an $ hbox{InP/In}_{0.37}hbox{Ga}_{0.63}hbox{As}_{0.89}hbox{Sb}_{0.11}/hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ double heterojunction bip

机译：我们报告了$ hbox {InP / In} _ {0.37} hbox {Ga} _ {0.63} hbox {As} _ {0.89} hbox {Sb} _ {0.11} / hbox {In}的直流和微波特性_ {0.53} hbox {Ga} _ {0.47} hbox {As} $双异质结bip

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来源
《IEEE Electron Device Letters》 |2008年第7期|p.655-657|共3页
作者
Chen S.-H.; Teng K.-H.; Chen H.-Y.; Wang S.-Y.; Chyi J.-I.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类一般性问题;
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1. Substitutional-Gate MOSFETs With Composite $( hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}/hbox{InAs}/hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As})$ Channels and Self-Aligned MBE Source–Drain Regrowth [J] . Lee S., Law J. J. M., Carter A. D., Electron Device Letters, IEEE . 2012,第11期

机译：具有复合$（hbox {In} _ {0.53} hbox {Ga} _ {0.47} hbox {As} / hbox {InAs} / hbox {In} _ {0.53} hbox {Ga} _ {{0.47} hbox {As}）$通道和自对准MBE源漏恢复
2. Gate-Geometric Recessed Nanoscale $hbox{In}_{0.52} hbox{Al}_{0.48}hbox{As}$–$hbox{In}_{0.53} hbox{Ga}_{0.47}hbox{As}$ Double-Gate HEMT for High Breakdown [J] . Rathi S., Gupta R. S., Gupta M. Device and Materials Reliability, IEEE Transactions on . 2012,第1期

机译：栅几何嵌入式纳米级$ hbox {In} _ {0.52} hbox {Al} _ {0.48} hbox {As} $ – $ hbox {In} _ {0.53} hbox {Ga} _ {0.47} hbox {As} $双门HEMT高故障率
3. A Two-Step-Recess Process Based on Atomic-Layer Etching for High-Performance $hbox{In}_{0.52}hbox{Al}_{0.48}hbox{As}hbox{/}hbox{In}_{0.53} hbox{Ga}_{0.47}hbox{As}$ p-HEMTs [J] . Kim T.-W., Kim D.-H., Park S.-D., IEEE Transactions on Electron Devices . 2008,第7期

机译：基于原子层蚀刻的高性能两步式工艺$ hbox {In} _ {0.52} hbox {Al} _ {0.48} hbox {As} hbox {/} hbox {In} _ {0.53} hbox {Ga} _ {0.47} hbox {As} $ p-HEMT
4. Weak emitter-size effect in InP/In0.37Ga0.63As0.89Sb0.11/In0.53Ga0.47As double heterojunction bipolar transistors [C] . Che-An Chang, Chen Shu-Han, Wang Sheng-Yu, Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials . 2011

机译：InP / In 0.37 Ga 0.63 As 0.89 Sb 0.11 / In 0.53的发射极尺寸效应弱 Ga 0.47 作为双异质结双极晶体管
5. Diversification of spatiotemporal expression and copy number variation of the echinoid hbox12/pmar1/micro1 multigene family [O] . Vincenzo Cavalieri, Fabiana Geraci, Giovanni Spinelli 2012

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Low Turn-On Voltage and High-Current $hbox{InP}/ hbox{In}_{0.37}hbox{Ga}_{0.63}hbox{As}_{0.89}hbox{Sb}_{0.11}/hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ Double Heterojunction Bipolar Transis

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