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首页> 外文期刊>IEEE Electron Device Letters >Ultra-Low-Voltage Schottky-Barrier Field-Enhanced Electron Emission From Gold Nanowires Electrochemically Grown in Modified Porous Alumina Templates
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Ultra-Low-Voltage Schottky-Barrier Field-Enhanced Electron Emission From Gold Nanowires Electrochemically Grown in Modified Porous Alumina Templates

机译:修饰多孔氧化铝模板中电化学生长的金纳米线的超低压肖特基势垒场增强电子发射

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摘要

Superior field emission (FE) action has been observed from a tailored array of gold nanowires (AuNWs) grown in porous anodic alumina (PAA) templates. The turn-on voltage was found to be $sim$ 0.2 V, which is far less than the values reported earlier for diamond-coated cathodes and carbon nanotubes (CNTs). Furthermore, the FE current was unaffected by the ambient gas pressure. Such a low-voltage FE is attributed here to the formation of a Schottky barrier at the interface of gold and amorphous alumina scales that remain on the AuNWs.
机译:从在多孔阳极氧化铝(PAA)模板中生长的量身定制的金纳米线(AuNWs)阵列中,观察到了出色的场发射(FE)作用。发现导通电压为sim $ 0.2 V,远低于先前报道的金刚石涂层阴极和碳纳米管(CNTs)的值。此外,FE电流不受环境气压的影响。这种低压FE在这里归因于在金和无定形氧化铝鳞片(保留在AuNWs上)的界面上形成了肖特基势垒。

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