Characteristics of Fully Depleted Strained-Silicon-On-Insulator Capacitorless Dynamic Random Access Memory Cells

摘要

A fully depleted strained-silicon-on-insulator (FD-sSOI) capacitorless one-transistor dynamic random access memory (1T-DRAM) cell with a strained channel was fabricated, and the electrical characteristics of transistor and DRAM were compared with that of a conventional FD-SOI capacitorless 1T-DRAM cell. The fabricated FD-sSOI DRAM cell has excellent transistor electrical parameters, such as extremely low leakage current $(≪hbox{10}^{-12} hbox{A})$, small subthreshold swing of 60.3 mV/dec, and high on/off current ratio of nearly $hbox{10}^{8}$. Furthermore, the FD-sSOI 1T-DRAM cell shows enhanced effective electron mobility and improved sensing margin compared with the FD-SOI 1T-DRAM cell.