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High-Performance 94-GHz Single-Balanced Diode Mixer Using Disk-Shaped GaAs Schottky Diodes

机译:使用盘形GaAs肖特基二极管的高性能94 GHz单平衡二极管混频器

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We present a high-performance 94-GHz single-balanced monolithic millimeter-wave integrated-circuit (MMIC) mixer using the disk-shaped GaAs Schottky diodes grown on an n/$hbox{n}+$ epitaxial structure. Due to the superior characteristics of the GaAs diodes with high diode-to-diode uniformity, the mixer shows a conversion loss of 5.5 dB at 94 GHz, a 1-dB compression point $(P_{1 hbox{-}{rm dB}})$ of 5 dBm, and high local-oscillator to radio-frequency isolation above 30 dB in an RF frequency range of 91–97 GHz. To our knowledge, the fabricated mixer shows the best performance in terms of conversion loss at 94 GHz and $P_{1 hbox{-}{rm dB}}$ among the W-band MMIC mixers without amplifier circuits.
机译:我们提出了一种高性能的94 GHz单平衡单片毫米波集成电路(MMIC)混频器,它使用在n / $ hbox {n} + $外延结构上生长的盘形GaAs肖特基二极管。由于具有高二极管到二极管均匀性的GaAs二极管的优越特性,混频器在94 GHz频率下显示5.5 dB的转换损耗,压缩点为1 dB(P_ {1 hbox {-} {rm dB} })$ 5 dBm,在91-97 GHz的RF频率范围内具有高本地振荡器至30 dB以上的射频隔离。据我们所知,在没有放大器电路的W波段MMIC混频器中,就94 GHz的转换损耗和$ P_ {1 hbox {-} {rm dB}} $而言,人造混频器表现出最佳性能。

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