Comparison of Low-Frequency Noise in Channel and Gate-Induced Drain Leakage Currents of High-$k$ nFETs

摘要

The random telegraph noise in the gate-induced drain leakage (GIDL) and channel currents of nanoscale high- $k$ nMOSFETs was analyzed and compared systematically. The capture and emission probabilities of the carriers were analyzed in terms of the gate voltage and the temperature. Both emission time $(tau_{e})$ and capture time $(tau_{c})$ in the channel current have a dependence on $V_{rm GS}$. However, $ tau_{e}$ in the GIDL current is independent of $V_{rm GS}$ but strongly dependent on the temperature since $tau_{e}$ is decreased more significantly with increasing temperature than $ tau_{c}$. As $V_{rm GS}$ increases, $tau_{c}$ in the GIDL current increases.