A High-Performance 30-nm Gate-All-Around Poly-Si Nanowire Thin-Film Transistor With $hbox{NH}_{3}$ Plasma Treatment

摘要

A novel 30-nm gate-all-around (GAA) polycrystalline-silicon (poly-Si) nanowire (NW) thin-film transistor (TFT) is reported for the first time. Owing to the NW and GAA structure, the channel electric potential is well controlled by the gate electrode. After $hbox{NH}_{3}$ plasma treatment for defects passivation, the values of 0.97 V, 224 mV/dec., and 0.895 V/V of threshold voltage, subthreshold swing, and drain-induced barrier lowering are achieved, respectively. A high driving current of 459 $muhbox{A}/muhbox{m}$ and an on-state/off-state current ratio of $hbox{5} times hbox{10}^{7}$ are also obtained. These excellent characteristics indicate that the ultrasmall GAA NW poly-Si TFT would have the potential to be applied in the 3-D integrated-circuit or system-on-panel field.