Design of Tunneling Field-Effect Transistors Based on Staggered Heterojunctions for Ultralow-Power Applications

摘要

This letter presents the design of a tunneling FET with III-V-based tunnel heterojunctions for operation in digital circuits with supply voltages as low as 0.3 V. A representative implementation is predicted to achieve an on-state current drive of 0.4 mA/¿m with an off-state current of 50 nA/¿m. Comparison with homojunction counterparts reveals that the hetero-tunnel-junction implementations may address better the design tradeoff between on-state drive and off-state leakage.