Tuning the Threshold Voltage of Double-Gate Low-Voltage Transparent Oxide-Based TFTs by a Lateral In-Plane Gate

摘要

Double-gate low-voltage transparent oxide-based thin-film transistors (TFTs) with a lateral in-plane gate are self-aligned by only one metal shadow mask. The threshold voltage of such devices can be tuned in a wide range from $-$1.07 to 0.78 V by the lateral in-plane gate, which allows the device switching from a depletion- to an enhancement-mode operation. High performance with a field-effect mobility of $>hbox{10} hbox{cm}^{2}/hbox{V}cdothbox{s}$, a current on/off ratio of $sim!hbox{3} times hbox{10}^{5}$, and a low subthreshold swing of $sim$195 mV/decade is obtained at various voltage biases of the in-plane gate. Such double-gate TFTs are promising for next-generation transparent electronics with low power consumption.