Bidirectional Two-Terminal Switching Device for Crossbar Array Architecture

摘要

We propose a bilateral switching poly-Si junction device to realize a crossbar array with a perpendicular spin-transfer torque (STT) magnetic random access memory (MRAM). An $hbox{N}^{+} hbox{/P/N}^{+}$ bilateral junction device with two bias terminals provides bidirectional current flow enough to write STT MRAM by a drain induced barrier lowering under a reverse bias of $hbox{N}^{+}hbox{/}hbox{P}$. In addition, asymmetrical doping for two $hbox{N}^{+}$ terminals provides a high on–off ratio of $hbox{10}^{7}$ under read condition, which is acceptable for a crossbar array. From this work, it is expected that a bilateral poly-Si junction will be a promising switch device to achieve crossbar architecture with a perpendicular STT MRAM.