Organic Programmable Resistance Memory Device Based on $hbox{Au/Alq}_{3}/hbox{gold-nanoparticle/Alq}_{3}/hbox{Al}$ Structure

摘要

In this letter, an organic memory cell based on tris(8-hydroxyquinolinato)aluminum doped with gold nanoparticles is reported. The device can achieve good resistive switching properties, such as a high on/off current ratio of about $hbox{10}^{4}$, and good retention (4 h at 0.1 V). The device remains in either state even after the power has been turned off and shows a good stability under stress test. The current–voltage characteristics are comprehensively investigated, and a possible mechanism is proposed and well fitted with the experiment data. The results show that the organic memory devices have promising potentials for future flexible electronic systems.