High n-Type Antimony Dopant Activation in Germanium Using Laser Annealing for $hbox{n}^{+}/hbox{p}$ Junction Diode

摘要

Highly activated n-type dopant is essential for $hbox{n}^{+}/hbox{p}$ germanium diodes which will be in use for source/drain regions in Ge n-MOSFET as the geometry scaling proceeds. This letter has investigated a combination of ion implantation of Sb in Ge and subsequent laser annealing, which resulted in highly activated Sb beyond $hbox{10}^{20} hbox{cm}^{-3}$. Well-behaved Sb-doped $hbox{n}^{+}/hbox{p}$ Ge diode $I$– $V$ characteristics have been demonstrated combined with TEM, SIMS, and spreading resistance profiling characterization.