4H-SiC BJTs With Record Current Gains of 257 on (0001) and 335 on ($ hbox{000}bar{hbox{1}}$)

摘要

We demonstrate 4H-SiC bipolar junction transistors (BJTs) with record current gains. An improved current gain was achieved by utilizing optimized device geometry and continuous epitaxial growth of the emitter–base junction, combined with an intentional deep-level-reduction process based on thermal oxidation to improve the lifetime in p-SiC base. A current gain ($beta$) of 257 was achieved for 4H-SiC BJTs fabricated on the (0001) Si face. A gain of 257 is twice as large as the previous record gain. We also demonstrate BJTs on the ($hbox{000}bar{hbox{1}}$ ) C face that showed the highest $beta$ of 335 among the SiC BJTs ever reported.