Improved Uniformity of Sequential Lateral Solidification Thin-Film Transistors

摘要

The uniformity of threshold voltage ($V_{rm th}$) in sequential lateral solidification (SLS) thin-film transistors (TFTs) is investigated. Some SLS TFTs have higher $V_{rm th}$ values than others, which causes problems in applications requiring a high level of TFT uniformity such as active-matrix organic light-emitting diode displays. Focused ion beam observations revealed that all TFTs with high $V_{rm th}$ values had protrusions $hbox{3000}$– $hbox{7000} hbox{rm{AA}}$ from the junction. Using a smart tilted-channel structure decreased the $V_{rm th}$ variation to less than 0.2 V.