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首页> 外文期刊>Electron Device Letters, IEEE >Three-Dimensional Solenoids Realized via High-Density Deep Coil Stacking for MEMS Application
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Three-Dimensional Solenoids Realized via High-Density Deep Coil Stacking for MEMS Application

机译:通过高密度深线圈堆叠实现的MEMS三维电磁铁

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摘要

Three-dimensional solenoids have been developed and demonstrated for the first time in stacking of through-silicon via chips. High-density microcoils ($sim!!hbox{20}hbox{-}mu hbox{m}$ width, $sim!!hbox{10}hbox{-}muhbox{m}$ space, and $sim!!hbox{90}hbox{-}muhbox{m}$ depth with 24 turns) were completely filled with Cu. Eight high-density microcoil chips were stacked using a conductive adhesive. The inductance of the eight stacked high-density microcoil chips is measured to be $sim!!hbox{30} muhbox{H}$ at 0.9 MHz, and the maximum magnetic field reaches to $sim$0.67 mT, as characterized by a magnetic field detector $sim$2 mm above the cavity center of the coils. The eight stacked high-density microcoil chips achieved 66-h operation under continuous current ( $sim$0.2 A) stress testing without failure. Two microcoil chips stacked using solder also completed 1000 thermal cycles ($-hbox{40} ^{circ} hbox{C}$ to 125 $^{circ}hbox{C}$) successfully with merely $sim$3.7% resistance change.
机译:三维螺线管已经在硅通孔芯片堆叠中得到了首次开发和演示。高密度微线圈($ sim !! hbox {20} hbox {-} mu hbox {m} $宽度,$ sim !! hbox {10} hbox {-} muhbox {m} $空间和$ sim !! hbox {90} hbox {-} muhbox {m} $深度(24圈)完全充满了铜。使用导电粘合剂堆叠八个高密度微线圈芯片。八个堆叠的高密度微线圈芯片的电感在0.9 MHz处测量为$ sim !! hbox {30} muhbox {H} $,最大磁场达到$ sim $ 0.67 mT,以磁场为特征线圈腔中心上方的探测器$ sim $ 2 mm。八个堆叠的高密度微线圈芯片在连续电流(sim $ 0.2 A)压力测试下实现了66小时的运行而没有失败。使用焊料堆叠的两个微线圈芯片也成功完成了1000个热循环($ -hbox {40} ^ {circ} hbox {C} $至125 $ ^ {circ} hbox {C} $),而电阻变化仅为$ sim $ 3.7%。

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