Colossal Lateral Photovoltaic Effect Observed in Metal-Oxide-Semiconductor Structure of

摘要

How to obtain a large sensitivity has been a central issue of lateral photovoltaic effects (LPEs) since it had been discovered many decades ago. This work reports a colossal LPE in a nanolayer Ti and $hbox{TiO}_{2}$ modulated metal-oxide-semiconductor (MOS) structure of $hbox{Ti/TiO}_{2}/hbox{Si}$. The obtained 169 mV/mm sensitivity in this structure represents currently the highest level compared with previously reported results of 700 $muhbox{V/mm}$-60 mV/mm in any other systems. The results indicate this MOS structure can be used as novel position-sensitive detectors with high sensitivity.