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Fabrication and characterization of magnetotransport in colossal magnetoresistive manganite thin films and hybrid structures.

机译:巨大磁阻锰矿薄膜和混合结构中磁输运的制备与表征。

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摘要

The continually increasing demand for magnetic information storage and retrieval has driven a significant worldwide effort to improve the performance of relevant hard ware components. As the areal density continues to increase, more sensitive materials and innovative structures will be required to detect the decreasing fringe fields emanating from the media. Doped manganites in thin film form are being examined as a possible next generation magnetoresistance sensor material. The magnetoresistance of these doped manganite thin films is of unprecedented magnitude; however, these large resistance changes are achieved only in a strong field in the Tesla range, thus severely limiting their practical utility. This dissertation addresses some of the critical parameters, which influence the properties and efforts to reduce the field scale necessary to observe high magnetoresistance ratios in these films.; The primary deposition technique used in this work is pulsed laser deposition. Initial work was concentrated on the optimization of various process parameters to obtain high quality thin films of manganites. Systematic post deposition heat treatments in oxygen and argon ambient at elevated temperatures revealed that transition temperature is related to the Mn-O fraction and uniform distribution of oxygen across the films rather than just the oxygen content of the films as proposed by others. MR ratio is improved by the improvement in the microstructure (recrystallization and grain growth) of the films after annealing; however vacancies created on the lanthanum site by the high temperature anneal also seem to be an important factor in the determination of the MR ratio.; Self-doped, mixed doped and external doped lanthanum manganite thin films, where the external dopant is Ca, have shown different transition temperature and MR ratios. The variation in the insulator-to-metal transition could be explained on the basis of Mn4+ content while the MR property seemed to be related to the microstructure of the films (impurities, defects, grain boundary and domain wall scattering).; A novel way to reduce the fields necessary to produce high magnetoresistance ratios in doped manganites may be to provide a local biasing field. This local biasing field may be generated either by the addition of a magnetic impurity (such as cobalt in this study) or by another ferromagnetic film in close proximity as that in a superlattice configuration. Indeed, an enhancement in magnetoresistance was observed in both the studies.
机译:对磁性信息存储和检索的需求不断增长,已经在全球范围内进行了巨大的努力,以改善相关硬件组件的性能。随着面密度的持续增加,将需要更多的敏感材料和创新的结构来检测从媒体散发出来的减少的边缘场。正在研究薄膜形式的掺杂锰铁矿作为下一代磁阻传感器材料的可能。这些掺杂的锰矿薄膜的磁阻是前所未有的。但是,这些大的电阻变化仅在特斯拉范围内的强磁场中才能实现,从而严重限制了其实用性。本文讨论了一些关键参数,这些参数影响了性能和减小在这些薄膜中观察高磁阻比所必需的减小磁场规模的努力。在这项工作中使用的主要沉积技术是脉冲激光沉积。最初的工作集中在优化各种工艺参数以获得高质量的锰矿薄膜上。在高温下在氧气和氩气环境中进行的系统后沉积热处理表明,转变温度与Mn-O分数和氧气在薄膜上的均匀分布有关,而不仅仅是其他人提出的薄膜中的氧气含量。通过改善退火后薄膜的微观结构(重结晶和晶粒生长),可以改善MR比。但是,高温退火在镧位上产生的空位似乎也是确定MR比的重要因素。自掺杂,混合掺杂和外部掺杂的锰镧镧薄膜(其中外部掺杂剂为Ca)显示出不同的转变温度和MR比。可以根据Mn 4 + 的含量解释绝缘体到金属的转变,而MR性能似乎与薄膜的微观结构(杂质,缺陷,晶界和畴壁散射)。减少在掺杂的锰矿中产生高磁阻比所必需的场的新颖方法可以是提供局部偏置场。可以通过添加磁性杂质(例如本研究中的钴)或通过与超晶格配置中的紧邻的另一个铁磁膜来生成此局部偏置场。实际上,在两项研究中均观察到了磁阻的增强。

著录项

  • 作者

    Pietambaram, Srinivas V.;

  • 作者单位

    University of Florida.;

  • 授予单位 University of Florida.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2001
  • 页码 144 p.
  • 总页数 144
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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