Polarization-Induced Electric Fields Make Robust n-GaN/i-InGaN/p-GaN Solar Cells

摘要

We study n-GaN/i-InGaN/p-GaN solar cells on Ga-face substrates. We find that polarization charges at the heterointerfaces pin the value of $V_{rm OC}$, $J_{rm SC}$, and the fill factor to nearly optimal levels when the InGaN layer thickness exceeds a value $d_{min}$, even as the p- and n-layer thicknesses and doping concentrations vary widely. We verify an analytical approximation for $d_{min}$. We report nearly undiminished performance when an i-GaN setback layer is added between a p-doped layer and the i-InGaN layer—an addition that may be necessary to obtain good quality heterointerfaces. Additionally, the 2-D electron gas formed at the n-GaN/i-InGaN interface facilitates thinner n-GaN window layers for improved external quantum efficiency.