Solution-Processed Vertical Organic Transistors Fabricated by Nanoimprint Lithography

摘要

In this letter, we demonstrate the first vertical-channel organic transistor using nanoimprint technology to produce a base electrode with high-density nanometer pores to well control the channel current vertically flowing through the pores. The aspect ratios of nanopores, which determine the switching performance of the vertical transistor, are greatly enhanced by transferring the nanostructure to the underlying layers. Without pore accumulation, a low leakage current can be achieved. The vertical transistor delivers an on current of 0.35 $hbox{mA/cm}^{2}$ and an on/off current ratio of around 3000 at 1.8 V. The results prove the feasibility to produce low-voltage organic transistors over a large area with potentially low production cost.