Threshold Voltage Control by Substrate Bias in 10-nm-Diameter Tri-Gate Nanowire MOSFET on Ultrathin BOX

摘要

We investigated the substrate bias effect in 10-nm-diameter tri-gate nanowire (NW) MOSFETs on ultrathin BOX. By employing a thin BOX of 20 nm and a thin NW body, a large body effect factor was achieved, which is sufficient for wide range $V_{rm th}$ control. $I_{rm on}{-}I_{rm off}$ adjustment by $V_{rm sub}$ of 1 V or $-$ 1 V enabled a 13% increase in $I_{rm on}$ or a one-order decrease in $I_{rm off}$, respectively. Negative $V_{rm sub}$ could enlarge SRAM noise margin. Thus, a tri-gate NW MOSFET on ultrathin BOX is potential advantage for low power operation by adopting dynamic power and performance management.