Electrical Characteristics of $hbox{Ba}_{0.6}hbox{Sr}_{0.4} hbox{TiO}_{3}$ Thin-Film Chip Capacitors for Embedded Passive Components

摘要

The single-layer $hbox{400} muhbox{m} times hbox{200} muhbox{m}$ sized $hbox{Ba}_{0.6}hbox{Sr}_{0.4}hbox{TiO}_{3}$ thin-film embedded chip capacitors with two external electrodes fabricated on the surface of the chip capacitors have been demonstrated. The structure of the external electrodes placed on the same surface allows the reduction of connection length, resulting in low parasitic loss and noise of elecronic devices. The fabricated chip capacitors exhibited excellent electrical properties such as high capacitance density and dielectric constant (1687 $hbox{nF/cm}^{2}$ and 452) and a low dielectric loss of 0.052 at 1 kHz, respectively. In addition, the chip capacitors exhibited the superior temperature stability of X5R $(Delta{C/C} = pmhbox{15}% hbox{at} -!hbox{55} ^{circ}hbox{C} hbox{to}break +!hbox{85} ^{circ}hbox{C})$ characteristics. Such a low leakage current density of $sim!! hbox{0.15} muhbox{A/cm}^{2}$ at 3 V and a high breakdown voltage of 19.75 V were obtained as well. In conclusion, the chip capacitors are suggested as a candidate for the applications of embedded passive components.